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Source to Drain Diode Specifications. Gate to Source Voltage. RGATE 9 20 0.
Life support devices or systems are devices or. Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device.
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Derate Above 25 o C. The term of this agreement is perpetual unless terminated by ON Semiconductor as set forth herein. Package Body for 10s, See Techbrief Gate Charge at 10V. RSLC2 5 50 1e3. Components to PC Boards”. REV 5 February This datasheet contains the design specifications for. A critical component is any component of a life. Reliability data can be found at: This device is capable. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge.
75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs
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Test Circuits and Waveforms. Except as expressly permitted in this Agreement, Licensee shall not disclose, or allow access to, the Content or Modifications to any third party. It was designed for use in applications where power. Specifications may change in.