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Normalised drain-source on-state resistance.

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Typical turn-on gate-charge characteristics. Normalised continuous drain current. These are stress ratings only and operation of the device buk4566 these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Typical reverse diode current.

Philips bu456 using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. May 7 Rev 1. Normalised continuous drain current. Observe the general handling precautions for datsaheet sensitive devices ESDs to prevent damage to MOS gate oxide. UNIT – – 1. Typical capacitances, Ciss, Coss, Crss. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.

Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. No liability will be accepted by the publisher for any consequence of its use.

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Refer to mounting instructions for TO envelopes. Normalised datwsheet on-state resistance. Typical reverse diode current. Product specification This data sheet contains final product specifications.

April 7 Rev 1. UNIT – – 1.

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice.

Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. Stress above one or more of the limiting values may cause permanent damage to the device. No liability will be accepted by the publisher for any consequence of its use. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

Product specification This data sheet contains final product specifications. Application information Where application information is given, it is advisory and does not form part of the specification.

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Observe the general handling precautions for electrostatic-discharge sensitive devices ESDs to prevent damage to MOS gate oxide. Exposure to limiting values for extended periods may affect device reliability. Typical turn-on gate-charge characteristics.

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Typical capacitances, Ciss, Coss, Crss. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. April 6 Rev 1. TOAB; pin 2 connected to mounting base. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied.

Application information Where application information is given, it is advisory and does not form part of the specification. Exposure to limiting values for extended periods may affect device reliability.

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Stress above one or more of the limiting values may cause permanent damage to the device. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. May 6 Rev 1. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.