K9F2G08U0M datasheet, K9F2G08U0M pdf, K9F2G08U0M data sheet, datasheet, data sheet, pdf, Samsung Electronic, FLASH MEMORY. K9F2G08U0M Datasheet PDF Download – FLASH MEMORY, K9F2G08U0M data sheet. The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications.
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This scheme dramatically reduces pin counts and allows system upgrades to future densities by maintaining consistency in system board design. The column address for the next data, which will be entered, may be changed to the address which follows random data input command 85h. We will also never share your payment dataxheet with your seller. Data input cycle for modifying a portion or multiple distant portions of the source page is allowed as shown in Figure The device may include invalid blocks datasheeet first shipped.
Pb-free Package is added.
The information regarding the invalid block s is so called as the invalid block information. Unique ID for Copyright Protection? Exposure to absolute maximum rating conditions for datasheett periods may affect reliability. The command register is cleared to wait for the next command, and the Status Register is cleared to value C0h when WP is high.
In Block Erase operation, however, only the three row address cycles are used.
If program operation results in an error, map out the block including the page in error and copy the target data to another block. Page 35 Draft Date Sep. When low, it indicates that a program, erase or random read operation is in process and returns to high state upon completion.
K9F2G08U0M Datasheet PDF
In the case of status read failure after erase or program, block replacement should be done. The program and read operations are executed on a page basis, while the erase operation is executed on a block basis. When the device is in Busy state during random read, program or erase mode, the reset operation will abort these operations.
Devices with invalid block s have the same quality k9r2g08u0m as devices with all valid blocks and have the same AC and DC characteristics.
Page Read and Page Program need the same five address cycles following the required command input. The internal write verify detects only errors for “1”s that are not successfully programmed to “0”s. Cycle 00h 00h 90h FFh 80h 80h 85h 60h 85h 05h 70h 2nd. The command register remains in Status Read mode until further commands k9f2g08j0m issued to it.
K9F2G08U0M datasheet, Pinout ,application circuits M X 8 Bit / M X 16 Bit NAND Flash Memory
A byte X8 device or word X16 device data register and a byte X8 device or word X16 device cache register are serially connected to each other. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. VIL can undershoot to Refer to the qualification report for the actual data. The addressing should be done in sequential order in a block. It is possible to write data into the cache registers while data stored in data registers are being programmed into memory cells in cache program mode.
This two-step sequence of setup followed by execution command ensures that memory contents are not accidentally erased due to external noise conditions. Device operations are selected by writing specific commands into the command register. Some commands require one bus cycle. RE or CE does not need to be toggled for updated status. Data is valid tREA after the falling edge of RE which also increments the internal column address counter by one.
An internal voltage detector enables auto-page read functions when Vcc reaches about 1. Data in the data page can be read out at 50ns 30ns, only X8 device cycle time per byte or word X16 device. The invalid block s status is defined by the 1st byte X8 device or 1st word X16 device in the spare area.